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The Effects of Residual RTOs on Formation of CoSi[sub 2] and Its Properties for 0.18 μm CMOS

The Effects of Residual RTOs on Formation of CoSi[sub 2] and Its Properties for 0.18 μm CMOS

Lee, Wan-Gyu

期刊名称Journal of The Electrochemical Society
作者Lee, Wan-Gyu
卷第151卷
期第2期
印刷ISSN0013-4651
文件大小570.48KB
发表时间2004
DOI10.1149/1.1639170

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