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Increase in the rate and discretization of the kinetics of isothermal surface generation of minority charge carriers in metal-insulator-semiconductor structures with a planar-inhomogeneous insulator

Increase in the rate and discretization of the kinetics of isothermal surface generation of minority charge carriers in metal-insulator-semiconductor structures with a planar-inhomogeneous insulator

A. G. Zhdan; E. I. Goldman; Yu. V. Gulyaev; G. V. Chucheva

作者A. G. Zhdan; E. I. Goldman; Yu. V. Gulyaev; G. V. Chucheva
卷第39卷
期第6期
印刷ISSN1063-7826
电子ISSN1090-6479
文件大小123.57KB
发表时间2005-06
DOI10.1134/1.1944857
页码666-673

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