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[IEEE Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Kyoto, Japan (June 14-16, 2005)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - High capacitance density (< 17 fF/μm/sup 2/) Nb/sub 2/O/sub 5/-based mim capacitors for future RF IC applications

[IEEE Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Kyoto, Japan (June 14-16, 2005)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - High capacitance density (< 17 fF/μm/sup 2/) Nb/sub 2/O/sub 5/-based mim capacitors for future RF IC applications

Sun-Jung Kim, ; Byung Jin Cho, ; Yu, M.B.; Li, M.-F.; Xiong, Y.-Z.; Zhu, C.; Chin, A.; Kwong, D.-L.
  • 作者Sun-Jung Kim, ; Byung Jin Cho, ; Yu, M.B.; Li, M.-F.; Xiong, Y.-Z.; Zhu, C.; Chin, A.; Kwong, D.-L.
  • 文件大小465.42KB
  • 发表时间2005
  • DOI10.1109/.2005.1469210
  • 页码56-57
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