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Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique

Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique

Xuejie Shi, ; Henttinen, K.; Suni, T.; Suni, I.; Man Wong,

期刊名称IEEE Electron Device Letters
作者Xuejie Shi, ; Henttinen, K.; Suni, T.; Suni, I.; Man Wong,
卷第26卷
期第9期
印刷ISSN0741-3106
文件大小141.52KB
发表时间2005-09
DOI10.1109/led.2005.853649
页码607-609

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