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Si nanocrystal-containing SiOx (x < 2) produced by thermal annealing of PECVD realized thin films

Si nanocrystal-containing SiOx (x < 2) produced by thermal annealing of PECVD realized thin films

M. Bedjaoui; B. Despax; M. Caumont; C. Bonafos

作者M. Bedjaoui; B. Despax; M. Caumont; C. Bonafos
印刷ISSN0921-5107
文件大小362.25KB
发表时间2005
DOI10.1016/j.mseb.2005.08.066
页码508-512

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