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Technology CAD of silicided Schottky barrier MOSFET for elevated source–drain engineering

Technology CAD of silicided Schottky barrier MOSFET for elevated source–drain engineering

A.R. Saha; S. Chattopadhyay; C. Bose; C.K. Maiti

作者A.R. Saha; S. Chattopadhyay; C. Bose; C.K. Maiti
印刷ISSN0921-5107
文件大小543.34KB
发表时间2005
DOI10.1016/j.mseb.2005.08.098
页码424-430

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