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Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates

Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates

Makimoto, Toshiki; Yamauchi, Yoshiharu; Kido, Takatoshi; Kumakura, Kazuhide; Taniyasu, Yoshitaka; Kasu, Makoto; Matsumoto, Nobuo
  • 期刊名称Japanese Journal of Applied Physics
  • 作者Makimoto, Toshiki; Yamauchi, Yoshiharu; Kido, Takatoshi; Kumakura, Kazuhide; Taniyasu, Yoshitaka; Kasu, Makoto; Matsumoto, Nobuo
  • 卷第44卷
  • 印刷ISSN0021-4922
  • 电子ISSN1347-4065
  • 文件大小117.24KB
  • 发表时间2005-4-21
  • DOI10.1143/jjap.44.2722
  • 页码2722-2725
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