Two-Dimensional Analytical Threshold Voltage Model for DMG Epi-MOSFET
- 期刊名称IEEE Transactions on Electron Devices
- 作者Goel, K.; Saxena, M.; Gupta, M.; Gupta, R.S.
- 卷第52卷
- 期第1期
- 印刷ISSN0018-9383
- 文件大小464.98KB
- 发表时间2005-01
- DOI10.1109/ted.2004.841276
- 页码23-29
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