In situ chemical sensing in AlGaN∕GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time prediction of product crystal quality and advanced process control

• 作者S. Cho; G. W. Rubloff; M. E. Aumer; D. B. Thomson; D. P. Partlow; R. Parikh; R. A. Adomaitis
• 文件大小948.65KB
• 发表时间2005
• DOI10.1116/1.1993616