![Interfacial reaction depending on the stack structure of Al[sub 2]O[sub 3] and HfO[sub 2] during film growth and postannealing]()
Interfacial reaction depending on the stack structure of Al[sub 2]O[sub 3] and HfO[sub 2] during film growth and postannealingCho, M.-H.; Chung, K. B.; Chang, H. S.; Moon, D. W.; Park, S. A.; Kim, Y. K.; Jeong, K.; Whang, C. N.; Lee, D. W.; Ko, D.-H.; Doh, S. J.; Lee, J. H.; Lee, N. I. · Applied Physics Letters · 2004