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Transport properties of microcrystalline silicon, prepared at high growth rate

Transport properties of microcrystalline silicon, prepared at high growth rate

J. Kočka; T. Mates; M. Ledinský; H. Stuchlíková; J. Stuchlík; A. Fejfar

作者J. Kočka; T. Mates; M. Ledinský; H. Stuchlíková; J. Stuchlík; A. Fejfar
卷第352卷
印刷ISSN0022-3093
文件大小306.66KB
发表时间2006
DOI10.1016/j.jnoncrysol.2005.10.043

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