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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - 1.8 mΩcm<sup>2</sup>, 10 A Power MOSFET in 4H-SiC

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - 1.8 mΩcm², 10 A Power MOSFET in 4H-SiC

Harada, Shinsuke; Kato, Makoto; Suzuki, Kenji; Okamoto, Mitsuo; Yatsuo, Tsutomu; Fukuda, Kenji; Arai, Kazuo

作者Harada, Shinsuke; Kato, Makoto; Suzuki, Kenji; Okamoto, Mitsuo; Yatsuo, Tsutomu; Fukuda, Kenji; Arai, Kazuo
文件大小615.73KB
发表时间2006
DOI10.1109/IEDM.2006.346929
页码1-4

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