X-ray triple-axis diffractometry investigation of Si/SiGe/Si on silicon-on-insulator subjected to in situ low-temperature annealing
- 作者T.D. Ma; H.L. Tu; G.Y. Hu; B.L. Shao; A.S. Liu
- 卷第253卷
- 期第1期
- 印刷ISSN0169-4332
- 文件大小430.58KB
- 发表时间2006
- DOI10.1016/j.apsusc.2006.05.127
- 页码124-127