[IEEE 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia (2006.10.16-2006.10.18)] 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Superior nMOSFET scalability using Fluorineine co-implantation and spike annealing

Kubicek, S.; Hoffmann, T.; Augendre, E.; Pawlak, B.; Chiarella, T.; Kerner, C.; Severi, S.; Falepin, A.; De Keersgieter, A.; Noda, T.; Jurczak, M.; Absil, P.; Biesemans, S.

作者Kubicek, S.; Hoffmann, T.; Augendre, E.; Pawlak, B.; Chiarella, T.; Kerner, C.; Severi, S.; Falepin, A.; De Keersgieter, A.; Noda, T.; Jurczak, M.; Absil, P.; Biesemans, S.
文件大小3026.95KB
发表时间2006
DOI10.1109/asdam.2006.331164
页码101-104

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[IEEE 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia (2006.10.16-2006.10.18)] 2006 International Conference on Advanced Semiconductor Devices and Microsystems - Superior nMOSFET scalability using Fluorineine co-implantation and spike annealing