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High-mobility transistors based on nanoassembled carbon nanotube semiconducting layer and SiO[sub 2] nanoparticle dielectric layer

High-mobility transistors based on nanoassembled carbon nanotube semiconducting layer and SiO[sub 2] nanoparticle dielectric layer

Xue, Wei; Liu, Yi; Cui, Tianhong

期刊名称Applied Physics Letters
作者Xue, Wei; Liu, Yi; Cui, Tianhong
卷第89卷
期第16期
印刷ISSN0003-6951
文件大小486.82KB
发表时间2006
DOI10.1063/1.2361278

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