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Electrical characterization of defects introduced in n-type Ge during indium implantation

Electrical characterization of defects introduced in n-type Ge during indium implantation

F. D. Auret; P. J. Janse Van Rensburg; M. Hayes; J. M. Nel; W. E. Meyer; S. Decoster; V. Matias; A. Vantomme
  • 作者F. D. Auret; P. J. Janse Van Rensburg; M. Hayes; J. M. Nel; W. E. Meyer; S. Decoster; V. Matias; A. Vantomme
  • 文件大小335.58KB
  • 发表时间2006
  • DOI10.1063/1.2360922
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