Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors

• 期刊名称Japanese Journal of Applied Physics
• 作者Makimoto, Toshiki; Kido, Takatoshi; Kumakura, Kazuhide; Taniyasu, Yoshitaka; Kasu, Makoto; Matsumoto, Nobuo
• 卷第45卷
• 印刷ISSN0021-4922
• 电子ISSN1347-4065
• 文件大小109.12KB
• 发表时间2006-4-25
• DOI10.1143/jjap.45.3395
• 页码3395-3397