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Increased electron mobility in n-type Si-doped AlN by reducing dislocation density

Increased electron mobility in n-type Si-doped AlN by reducing dislocation density

Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki

期刊名称Applied Physics Letters
作者Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki
卷第89卷
期第18期
印刷ISSN0003-6951
文件大小504.46KB
发表时间2006
DOI10.1063/1.2378726

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