4.3 mΩcm2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET
Harada, Shinsuke; Kato, Makoto; Okamoto, Mitsuo; Yatsuo, Tsutomu; Fukuda, Kenji; Arai, Kazuo
- 期刊名称Materials Science Forum
- 作者Harada, Shinsuke; Kato, Makoto; Okamoto, Mitsuo; Yatsuo, Tsutomu; Fukuda, Kenji; Arai, Kazuo
- 电子ISSN1662-9752
- 文件大小344.12KB
- 发表时间2006
- DOI10.4028/www.scientific.net/MSF.527-529.1281
- 页码1281-1284