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Magnetic field sensors built from slightly crystallographic mismatched thin films of In0.53Ga0.47As/InP obtained by MBE and MOCVD

Magnetic field sensors built from slightly crystallographic mismatched thin films of In0.53Ga0.47As/InP obtained by MBE and MOCVD

Andrzej Wolkenberg; Tomasz Przesławski
  • 作者Andrzej Wolkenberg; Tomasz Przesławski
  • 卷第126卷
  • 期第2期
  • 印刷ISSN0924-4247
  • 文件大小441.95KB
  • 发表时间2006
  • DOI10.1016/j.sna.2005.10.025
  • 页码292-299
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