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Energy band alignment and interface states in AlGaN/4H–SiC vertical heterojunction diodes

Energy band alignment and interface states in AlGaN/4H–SiC vertical heterojunction diodes

Brian J. Johnson; Michael A. Capano; Michael A. Mastro

作者Brian J. Johnson; Michael A. Capano; Michael A. Mastro
卷第50卷
印刷ISSN0038-1101
文件大小274.53KB
发表时间2006
DOI10.1016/j.sse.2006.05.028
页码1413-1419

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