Physics based threshold voltage extraction and simulation for poly-crystalline thin film transistors using a double-gate structure
- 期刊名称Semiconductor Science and Technology
- 作者Sehgal, Amit; Mangla, Tina; Chopra, Sonia; Gupta, Mridula; Gupta, R S
- 卷第21卷
- 期第3期
- 印刷ISSN0268-1242
- 电子ISSN1361-6641
- 文件大小616.82KB
- 发表时间2006-03-01
- DOI10.1088/0268-1242/21/3/028
- 页码370-377
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