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Highly Conformal Hafnium Silicate Film Growth by Atomic-Layer Chemical Vapor Deposition using a New Combination of Precursors: Hf(OC(CH3)3)4and Si(N(CH3)(C2H5))4

Highly Conformal Hafnium Silicate Film Growth by Atomic-Layer Chemical Vapor Deposition using a New Combination of Precursors: Hf(OC(CH3)3)4and Si(N(CH3)(C2H5))4

J. Kim; K. Yong

作者J. Kim; K. Yong
文件大小220.76KB
发表时间2006
DOI10.1143/JJAP.45.5174

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