Microwave characteristics of hetero-junction impatt diodes based on SiC
- 期刊名称Journal de Physique IV (Proceedings)
- 作者Buniatyan, V. V.; Aroutiounian, V. M.; Soukiassian, P. G.; Zekentes, K.; Buniatyan,
- 卷第132卷
- 印刷ISSN1155-4339
- 电子ISSN1764-7177
- 文件大小83.64KB
- 发表时间2006-03
- DOI10.1051/jp4:2006132068
- 页码355-357