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Thermal stability and radiation resistance of tin valent states in the structure of the (As2Se3)1 −z(SnSe)z−x(GeSe)xsemiconductor glasses

Thermal stability and radiation resistance of tin valent states in the structure of the (As2Se3)1 −z(SnSe)z−x(GeSe)xsemiconductor glasses

G. A. Bordovskii; R. A. Kastro; A. V. Marchenko; S. A. Nemov; P. P. Seregin
  • 作者G. A. Bordovskii; R. A. Kastro; A. V. Marchenko; S. A. Nemov; P. P. Seregin
  • 卷第41卷
  • 期第12期
  • 印刷ISSN1063-7826
  • 电子ISSN1090-6479
  • 文件大小231.60KB
  • 发表时间2007-12
  • DOI10.1134/s1063782607120056
  • 页码1408-1412
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