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Mesoscopic fluctuations in the conductance of silicon-based MOS structures with a doped surface layer

Mesoscopic fluctuations in the conductance of silicon-based MOS structures with a doped surface layer

B. A. Aronzon; A. S. Vedeneev; A. M. Kozlov; A. A. Panferov; V. V. Ryl’kov

作者B. A. Aronzon; A. S. Vedeneev; A. M. Kozlov; A. A. Panferov; V. V. Ryl’kov
卷第52卷
期第10期
印刷ISSN1064-2269
电子ISSN1555-6557
文件大小184.06KB
发表时间2007-10
DOI10.1134/s1064226907100129
页码1153-1157

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