Resistance Switching Characteristics for Nonvolatile Memory Operation of Binary Metal Oxides
- 期刊名称Japanese Journal of Applied Physics
- 作者Park, In-Sung; Kim, Kyong-Rae; Lee, Sangsul; Ahn, Jinho
- 卷第46卷
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小107.96KB
- 发表时间2007-4-24
- DOI10.1143/JJAP.46.2172
- 页码2172-2174
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