Raman Scattering Studies of Electrically Active Impurities in in Situ B-Doped Silicon Nanowires: Effects of Annealing and Oxidation

• 期刊名称The Journal of Physical Chemistry C
• 作者Kawashima, Takahiro; Imamura, Goh; Saitoh, Tohru; Komori, Kazunori; Fujii, Minoru; Hayashi, Shinji
• 卷第111卷
• 期第42期
• 印刷ISSN1932-7447
• 电子ISSN1932-7455
• 文件大小325.75KB
• 发表时间2007-10
• DOI10.1021/jp074495r
• 页码15160-15165