Compensating defects in Si-doped AlN bulk crystals
- 作者K. Irmscher; T. Schulz; M. Albrecht; C. Hartmann; J. Wollweber; R. Fornari
- 印刷ISSN0921-4526
- 文件大小566.71KB
- 发表时间2007
- DOI10.1016/j.physb.2007.08.178
- 页码323-326
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