Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al[sub 2]O[sub 3] as gate dielectric
- 期刊名称Applied Physics Letters
- 作者Lin, H. C.; Yang, T.; Sharifi, H.; Kim, S. K.; Xuan, Y.; Shen, T.; Mohammadi, S.; Ye, P. D.
- 卷第91卷
- 期第21期
- 印刷ISSN0003-6951
- 文件大小463.67KB
- 发表时间2007
- DOI10.1063/1.2814052
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