Low resistivity Ga-doped ZnO thin films of less than 100 nm thickness prepared by ion plating with direct current arc discharge
- 期刊名称Applied Physics Letters
- 作者Yamada, Takahiro; Miyake, Aki; Kishimoto, Seiichi; Makino, Hisao; Yamamoto, Naoki; Yamamoto, Tetsuya
- 卷第91卷
- 期第5期
- 印刷ISSN0003-6951
- 文件大小524.55KB
- 发表时间2007
- DOI10.1063/1.2767213
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