Numerical simulation of temperature fields during the sublimation growth of SiC single crystals, using WIAS-HiTNIHS

• 作者Jürgen Geiser; Olaf Klein; Peter Philip
• 卷第303卷
• 期第1期
• 印刷ISSN0022-0248
• 文件大小1140.49KB
• 发表时间2007
• DOI10.1016/j.jcrysgro.2006.11.350
• 页码352-356