Influence of crystalline defects in Czochralski-grown Si multicrystal on minority carrier lifetime
- 作者Toshinori Taishi; Takeshi Hoshikawa; Muneyoshi Yamatani; Katsuhiko Shirasawa; Xinming Huang; Satoshi Uda; Keigo Hoshikawa
- 卷第306卷
- 期第2期
- 印刷ISSN0022-0248
- 文件大小1004.50KB
- 发表时间2007
- DOI10.1016/j.jcrysgro.2007.05.042
- 页码452-457
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