Comprehensive investigation on emitter ledge length of InGaP∕GaAs heterojunction bipolar transistors
- 作者S. Fu; R. Liu; S. Cheng; P. Lai; Y. Tsai; C. Hung; T. Chen; W. Liu
- 文件大小523.20KB
- 发表时间2007
- DOI10.1116/1.2723746
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