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Polysilicon thin film transistors using sputtered HfO2 gate dielectric and SiGe source/drain

Polysilicon thin film transistors using sputtered HfO2 gate dielectric and SiGe source/drain

K. Y. Tong; E. V. Jelenkovic; W. Liu; S. G. Wang; J. Y. Dai

作者K. Y. Tong; E. V. Jelenkovic; W. Liu; S. G. Wang; J. Y. Dai
文件大小101.37KB
发表时间2007
DOI10.1088/0268-1242/22/5/020

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