InP/InGaAs Hot Electron Transistors with Insulated Gate
- 期刊名称Japanese Journal of Applied Physics
- 作者Suwa, Akira; Hasegawa, Takashi; Hino, Takahiro; Saito, Hisashi; Oono, Masaya; Miyamoto, Yasuyuki; Furuya, Kazuhito
- 卷第46卷
- 印刷ISSN0021-4922
- 文件大小105.66KB
- 发表时间2007-6-22
- DOI10.1143/JJAP.46.L617
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