[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHzRomanczyk, B.; Guidry, M.; Wienecke, S.; Li, H.; Ahmadi, E.; Zheng, X.; Keller, S.; Mishra, U. K. · 2016