Effect of electron irradiation on carrier removal rate in silicon and silicon carbide with 4Hmodification

• 作者V. V. Kozlovskiĭ; V. V. Emtsev; K. V. Emtsev; N. B. Strokan; A. M. Ivanov; V. N. Lomasov; G. A. Oganesyan; A. A. Lebedev
• 卷第42卷
• 期第2期
• 印刷ISSN1063-7826
• 电子ISSN1090-6479
• 文件大小245.66KB
• 发表时间2008-02
• DOI10.1134/s1063782608020231
• 页码242-247