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Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses

Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses

J. Kočka; T. Mates; M. Ledinský; H. Stuchlíková; J. Stuchlík; A. Fejfar

作者J. Kočka; T. Mates; M. Ledinský; H. Stuchlíková; J. Stuchlík; A. Fejfar
卷第354卷
印刷ISSN0022-3093
文件大小2966.98KB
发表时间2008
DOI10.1016/j.jnoncrysol.2007.09.079

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