Analytical performance evaluation of AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor and its comparison with conventional HFETs for high power microwave applications
- 作者Ruchika Aggarwal; Anju Agrawal; Mridula Gupta; R. S. Gupta
- 卷第50卷
- 期第2期
- 印刷ISSN0895-2477
- 电子ISSN1098-2760
- 文件大小475.21KB
- 发表时间2008
- DOI10.1002/mop.23073
- 页码331-338