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General Control of Transition-Metal-Doped GaN Nanowire Growth: Toward Understanding the Mechanism of Dopant Incorporation

General Control of Transition-Metal-Doped GaN Nanowire Growth: Toward Understanding the Mechanism of Dopant Incorporation

Stamplecoskie, Kevin G.; Ju, Ling; Farvid, Shokouh S.; Radovanovic, Pavle V.
  • 期刊名称Nano Letters
  • 作者Stamplecoskie, Kevin G.; Ju, Ling; Farvid, Shokouh S.; Radovanovic, Pavle V.
  • 卷第8卷
  • 期第9期
  • 印刷ISSN1530-6984
  • 电子ISSN1530-6992
  • 文件大小338.97KB
  • 发表时间2008-09-10
  • DOI10.1021/nl8009523
  • 页码2674-2681
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