[ECS 214th ECS Meeting - Honolulu, HI (October 12 - October 17, 2008)] ECS Transactions - Inversion Layer Mobility in High-k Dielectric MOSFETs - Intrinsic Mobility Degradation by Electric Dipoles at High-k/SiO2 Interface

Ota, Hiroyuki; Hirano, Akito; Watanabe, Yukimune; Yashuda, Naoki; Iwamoto, Kunihiko; Okada, Kenji; Migita, Shinji; Nabatame, Toshihide; Toriumi, Akira

作者Ota, Hiroyuki; Hirano, Akito; Watanabe, Yukimune; Yashuda, Naoki; Iwamoto, Kunihiko; Okada, Kenji; Migita, Shinji; Nabatame, Toshihide; Toriumi, Akira
卷第16卷
文件大小830.25KB
发表时间2008
DOI10.1149/1.2981588
页码67-75

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[ECS 214th ECS Meeting - Honolulu, HI (October 12 - October 17, 2008)] ECS Transactions - Inversion Layer Mobility in High-k Dielectric MOSFETs - Intrinsic Mobility Degradation by Electric Dipoles at High-k/SiO2 Interface