[IEEE IC's (ISPSD) - Orlando, FL, USA (2008.05.18-2008.05.22)] 2008 20th International Symposium on Power Semiconductor Devices and IC's - The effect of the temperature on the Bipolar Degradation of 3.3 kV 4H-SiC PiN diodes

Brosselard, P.; Tomas, A. Perez.; Camara, N.; Hassan, J.; Jorda, X.; Vellvehi, M.; Godignon, P.; Millan, J.; Bergman, J. P.

作者Brosselard, P.; Tomas, A. Perez.; Camara, N.; Hassan, J.; Jorda, X.; Vellvehi, M.; Godignon, P.; Millan, J.; Bergman, J. P.
文件大小311.29KB
发表时间2008
DOI10.1109/ispsd.2008.4538942
页码237-240

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