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[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Experimental investigation on the origin of direction dependence of Si (110) hole mobility utilizing ultra-thin body pMOSFETs

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Experimental investigation on the origin of direction dependence of Si (110) hole mobility utilizing ultra-thin body pMOSFETs

Shimizu, Ken; Saraya, Takuya; Hiramoto, Toshiro

作者Shimizu, Ken; Saraya, Takuya; Hiramoto, Toshiro
文件大小316.34KB
发表时间2008
DOI10.1109/iedm.2008.4796615
页码1-4

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