[IEEE Related Materials (IPRM) - Versailles, France (2008.05.25-2008.05.29)] 2008 20th International Conference on Indium Phosphide and Related Materials - Hot electron transistors controlled by insulated gate with 70 NM-wide emitter
- 作者Saito, Hisashi; Hino, Takahiro; Miyamoto, Yasuyuki; Furuya, Kazuhito
- 文件大小376.65KB
- 发表时间2008
- DOI10.1109/iciprm.2008.4702950
- 页码1-4
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