[IEEE 2008 International Nano-Optoelectronics Workshop (i-Now) - Tokyo, Japan (2008.08.2-2008.08.15)] 2008 International Nano-Optoelectronics Workshop - Increment of voltage gain of InP/InGaAs hot electron transistors controlled by insulated gate
Hisashi Saito, ; Yasuyuki Miyamoto, ; Kazuhito Furuya,
- 作者Hisashi Saito, ; Yasuyuki Miyamoto, ; Kazuhito Furuya,
- 文件大小1151.81KB
- 发表时间2008
- DOI10.1109/inow.2008.4634575
- 页码355-356