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Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al[sub 2]O[sub 3] and SiO[sub 2]

Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al[sub 2]O[sub 3] and SiO[sub 2]

Y. J. Seo; K. C. Kim; H. D. Kim; M. S. Joo; H. M. An; T. G. Kim

作者Y. J. Seo; K. C. Kim; H. D. Kim; M. S. Joo; H. M. An; T. G. Kim
文件大小541.41KB
发表时间2008
DOI10.1063/1.2970990

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