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[IEEE 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China (2008.10.20-2008.10.23)] 2008 9th International Conference on Solid-State and Integrated-Circuit Technology - Random doping fluctuation effects on static noise margins of 6-T SRAM cells

[IEEE 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China (2008.10.20-2008.10.23)] 2008 9th International Conference on Solid-State and Integrated-Circuit Technology - Random doping fluctuation effects on static noise margins of 6-T SRAM cells

Oniciuc, Liviu; Andrei, Petru

作者Oniciuc, Liviu; Andrei, Petru
文件大小2561.19KB
发表时间2008
DOI10.1109/icsict.2008.4734587
页码488-491

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