[IEEE 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China (2008.10.20-2008.10.23)] 2008 9th International Conference on Solid-State and Integrated-Circuit Technology - A new process for self-aligned silicon-on-insulator with block oxide and its memory application for 1T-DRAM
- 作者Yi-Ming Tseng, ; Jyi-Tsong Lin, ; Yi-Chuen Eng, ; Shiang-Shi Kang, ; Hung-Jen Tseng, ; Ying-Chieh Tsai, ; Bao-Tang Jheng, ; Po-Hsieh Lin,
- 文件大小4320.71KB
- 发表时间2008
- DOI10.1109/icsict.2008.4734754
- 页码1154-1157
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