Redistribution of dopant, implanted in a multilayer structure for production of a -junction, during annealing radiative defects
- 作者E.L. Pankratov
- 卷第372卷
- 期第11期
- 印刷ISSN0375-9601
- 文件大小171.96KB
- 发表时间2008
- DOI10.1016/j.physleta.2007.10.058
- 页码1897-1903
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